Plasma Enhance Atomic Layer Deposition System (PEALD) Single-Wafer Deposition System
Introduction of PEALD System:
PEALD system is a single-wafer deposition system specially designed for scientific research and industry exploitation in special application field. The electric of the system completely accords with the CE criterion. The system has expanded the choice range of precursor...
Introduction of PEALD System:
PEALD system is a single-wafer deposition system specially designed for scientific research and industry exploitation in special application field. The electric of the system completely accords with the CE criterion. The system has expanded the choice range of precursor source,enhanced deposition rate of film, decreased deposition temperature, therefore, it's widely used in film deposition of materials sensitive of temperature and films on soft substrate.
Product benefit
Advanced software controlling system: many functions are integrated in the system,including technological formulation, parameter setting, popedom stetting ,interlocking alarming ad state supervisory control.
ALD Films
Elementary substance: Co, Cu, Ta, Ti, W, Ge, Pt, Ru, Ni, Fe…
Nitride: TiN, SiN, AlN, TaN, ZrN, HfN, WN …
Oxide: TiO2, HfO2, SiO2, ZnO, ZrO2, Al2O3, La2O3, SnO2…
Others: GaAs, AlP, InP, GaP, InAs, LaHfxOy, SrTiO3,SrTaO6…
Application fields of PEALD
High-k gate oxides
Storage capacitor dielectrics
High aspect ratio diffusion barriers for Cu interconnects
Pinhole-free passivation layers for OLEDs and polymers
Highly conformal coatings for MEMS applications
Coating of nanoporous structures
Doping of special fiber
Solar battery
Flat plate display
Optical thin-film
Nano film of other special structure
Technical parameters of PEALD System:
Wafer Dimension 12 inch and below
Wafer temperature RT-500ºC,Controlling precision ±0.1ºC
Number of precursor Three precursor lines,optional more lines
Temperature of precursor lines RT-200ºC,Controlling precision ±0.1ºC
Temperature of source bottles RT-200ºC,Controlling precision ±0.1ºC
ALD Valve Swagelok ALD swift valve
Background vacuum <5*10-3Torr
Gas carrier system N2 or Ar
Growing mode Consecutive or interval deposition mode
Plasma souce 300W remote ICP discharge plasma
Gas source of plasma discharge Three standard lines, optional more lines
Controlling system PLC plus touch screen or display
Power supply 50-60Hz,220V/20A AC
Depositon Heterogeneity Heterogeneity<±1%,
Dimension of the instrument 1000mmx750mmx1600mm
PEALD system is a single-wafer deposition system specially designed for scientific research and industry exploitation in special application field. The electric of the system completely accords with the CE criterion. The system has expanded the choice range of precursor source,enhanced deposition rate of film, decreased deposition temperature, therefore, it's widely used in film deposition of materials sensitive of temperature and films on soft substrate.
Product benefit
Advanced software controlling system: many functions are integrated in the system,including technological formulation, parameter setting, popedom stetting ,interlocking alarming ad state supervisory control.
ALD Films
Elementary substance: Co, Cu, Ta, Ti, W, Ge, Pt, Ru, Ni, Fe…
Nitride: TiN, SiN, AlN, TaN, ZrN, HfN, WN …
Oxide: TiO2, HfO2, SiO2, ZnO, ZrO2, Al2O3, La2O3, SnO2…
Others: GaAs, AlP, InP, GaP, InAs, LaHfxOy, SrTiO3,SrTaO6…
Application fields of PEALD
High-k gate oxides
Storage capacitor dielectrics
High aspect ratio diffusion barriers for Cu interconnects
Pinhole-free passivation layers for OLEDs and polymers
Highly conformal coatings for MEMS applications
Coating of nanoporous structures
Doping of special fiber
Solar battery
Flat plate display
Optical thin-film
Nano film of other special structure
Technical parameters of PEALD System:
Wafer Dimension 12 inch and below
Wafer temperature RT-500ºC,Controlling precision ±0.1ºC
Number of precursor Three precursor lines,optional more lines
Temperature of precursor lines RT-200ºC,Controlling precision ±0.1ºC
Temperature of source bottles RT-200ºC,Controlling precision ±0.1ºC
ALD Valve Swagelok ALD swift valve
Background vacuum <5*10-3Torr
Gas carrier system N2 or Ar
Growing mode Consecutive or interval deposition mode
Plasma souce 300W remote ICP discharge plasma
Gas source of plasma discharge Three standard lines, optional more lines
Controlling system PLC plus touch screen or display
Power supply 50-60Hz,220V/20A AC
Depositon Heterogeneity Heterogeneity<±1%,
Dimension of the instrument 1000mmx750mmx1600mm
| Attribute name | Attribute value |
|---|---|
| Product Features | |
| Color | Silver, White |
| Standards | According to customer requirements, CE |
| Installation, Training and Setting-up | Video technical support, Online technical support, Product Manual |
| Performance | multi-function, wide application, High precision |
| Warranty | 1Year |
| After Sale Services | lifetime |