Plasma Enhance Atomic Layer Deposition System (PEALD) Single-Wafer Deposition System
Introduction of PEALD System:
PEALD system is a single-wafer deposition system specially designed for scientific research and industry exploitation in special application field. The electric of the system completely accords with the CE criterion. The system has expanded the choice range of precursor...
Introduction of PEALD System:
PEALD system is a single-wafer deposition system specially designed for scientific research and industry exploitation in special application field. The electric of the system completely accords with the CE criterion. The system has expanded the choice range of precursor source,enhanced deposition rate of film, decreased deposition temperature, therefore, it's widely used in film deposition of materials sensitive of temperature and films on soft substrate.
Product benefit
Advanced software controlling system: many functions are integrated in the system,including technological formulation, parameter setting, popedom stetting ,interlocking alarming ad state supervisory control.
ALD Films
Elementary substance: Co, Cu, Ta, Ti, W, Ge, Pt, Ru, Ni, Fe…
Nitride: TiN, SiN, AlN, TaN, ZrN, HfN, WN …
Oxide: TiO2, HfO2, SiO2, ZnO, ZrO2, Al2O3, La2O3, SnO2…
Others: GaAs, AlP, InP, GaP, InAs, LaHfxOy, SrTiO3,SrTaO6…
Application fields of PEALD
High-k gate oxides
Storage capacitor dielectrics
High aspect ratio diffusion barriers for Cu interconnects
Pinhole-free passivation layers for OLEDs and polymers
Highly conformal coatings for MEMS applications
Coating of nanoporous structures
Doping of special fiber
Solar battery
Flat plate display
Optical thin-film
Nano film of other special structure
Technical parameters of PEALD System:
Wafer Dimension
12 inch and below
Wafer temperature
RT-500ºC,Controlling precision ±0.1ºC
Number of precursor
Three precursor lines,optional more lines
Temperature of precursor lines
RT-200ºC,Controlling precision ±0.1ºC
Temperature of source bottles
RT-200ºC,Controlling precision ±0.1ºC
ALD Valve
Swagelok ALD swift valve
Background vacuum
<5*10-3Torr
Gas carrier system
N2 or Ar
Growing mode
Consecutive or interval deposition mode
Plasma souce
300W remote ICP discharge plasma
Gas source of plasma discharge
Three standard lines, optional more lines
Controlling system
PLC plus touch screen or display
Power supply
50-60Hz,220V/20A AC
Depositon Heterogeneity
Heterogeneity<±1%,
Dimension of the instrument 1000mmx750mmx1600mm
PEALD system is a single-wafer deposition system specially designed for scientific research and industry exploitation in special application field. The electric of the system completely accords with the CE criterion. The system has expanded the choice range of precursor source,enhanced deposition rate of film, decreased deposition temperature, therefore, it's widely used in film deposition of materials sensitive of temperature and films on soft substrate.
Product benefit
Advanced software controlling system: many functions are integrated in the system,including technological formulation, parameter setting, popedom stetting ,interlocking alarming ad state supervisory control.
ALD Films
Elementary substance: Co, Cu, Ta, Ti, W, Ge, Pt, Ru, Ni, Fe…
Nitride: TiN, SiN, AlN, TaN, ZrN, HfN, WN …
Oxide: TiO2, HfO2, SiO2, ZnO, ZrO2, Al2O3, La2O3, SnO2…
Others: GaAs, AlP, InP, GaP, InAs, LaHfxOy, SrTiO3,SrTaO6…
Application fields of PEALD
High-k gate oxides
Storage capacitor dielectrics
High aspect ratio diffusion barriers for Cu interconnects
Pinhole-free passivation layers for OLEDs and polymers
Highly conformal coatings for MEMS applications
Coating of nanoporous structures
Doping of special fiber
Solar battery
Flat plate display
Optical thin-film
Nano film of other special structure
Technical parameters of PEALD System:
Wafer Dimension
12 inch and below
Wafer temperature
RT-500ºC,Controlling precision ±0.1ºC
Number of precursor
Three precursor lines,optional more lines
Temperature of precursor lines
RT-200ºC,Controlling precision ±0.1ºC
Temperature of source bottles
RT-200ºC,Controlling precision ±0.1ºC
ALD Valve
Swagelok ALD swift valve
Background vacuum
<5*10-3Torr
Gas carrier system
N2 or Ar
Growing mode
Consecutive or interval deposition mode
Plasma souce
300W remote ICP discharge plasma
Gas source of plasma discharge
Three standard lines, optional more lines
Controlling system
PLC plus touch screen or display
Power supply
50-60Hz,220V/20A AC
Depositon Heterogeneity
Heterogeneity<±1%,
Dimension of the instrument 1000mmx750mmx1600mm
| Attribute name | Attribute value |
|---|---|
| Product Features | |
| Color | Silver, White |
| Measurement method | Vacuum gauge, Temperature controller |
| Performance | automatic, multi-function, wide application, High precision, High technical content |
| Standards | According to customer requirements, CE |
| Installation, Training and Setting-up | Video technical support, Online technical support, Product Manual |
| Warranty | 1Year |
| After Sale Services | lifetime |